TSM7NC65CF C0G
MOSFET N-CH 650V 7A ITO220SManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM7NC65CF-C0G is an N-Channel Power MOSFET designed for high-voltage applications. This device features a 650V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C. With a maximum power dissipation of 44.6W (Tc) and a low on-resistance of 1.35 Ohm at 2A, 10V, it offers efficient power handling. The TSM7NC65CF-C0G utilizes Metal Oxide technology and is housed in an ITO-220S package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 24 nC at 10V and input capacitance (Ciss) of 1169 pF at 50V. This component is utilized across various industries including industrial power supplies, lighting, and consumer electronics. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44.6W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | ITO-220S |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1169 pF @ 50 V |
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