TSM7NC60CF C0G
MOSFET N-CH 600V 7A ITO220SManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM7NC60CF-C0G is an N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 7A at 25°C. With a maximum on-resistance (Rds On) of 1.2 Ohms at 2A and 10V, it offers efficient power handling. The device is packaged in an ITO-220S through-hole configuration, suitable for robust thermal management with a power dissipation of 44.6W (Tc). Key parameters include a gate charge (Qg) of 24 nC at 10V and input capacitance (Ciss) of 1169 pF at 50V. The TSM7NC60CF-C0G is utilized in power supply units, industrial motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44.6W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | ITO-220S |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1169 pF @ 50 V |
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