TSM7N90CZ C0G
MOSFET N-CHANNEL 900V 7A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM7N90CZ-C0G is a planar MOSFET, N-Channel device designed for high voltage applications. This TO-220 package component features a 900 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C (Tc). The Rds On is specified at a maximum of 1.9 Ohms for a drain current of 3.5A and gate-source voltage of 10V. Key parameters include a gate charge (Qg) of 49 nC at 10V and input capacitance (Ciss) of 1969 pF at 25V. With a maximum power dissipation of 40.3W (Tc) and an operating temperature range of -55°C to 150°C, this device is suitable for power supply, lighting, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1969 pF @ 25 V |
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