TSM7N90CI C0G
MOSFET N-CH 900V 7A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM7N90CI-C0G is a 900 V N-Channel Power MOSFET designed for high-voltage applications. Featuring a continuous drain current of 7A (Tc) and a maximum power dissipation of 40.3W (Tc), this component is suitable for demanding power conversion and control tasks. The TSM7N90CI-C0G offers a low on-resistance of 1.9 Ohm at 3.5A and 10V Vgs. Key parameters include a gate charge of 49 nC at 10V and input capacitance of 1969 pF at 25V. The device is housed in an isolated ITO-220AB package, facilitating through-hole mounting. Operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in industries such as industrial power supplies, lighting, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1969 pF @ 25 V |
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