TSM7N65ACI C0G
MOSFET N-CH 650V 7A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM7N65ACI-C0G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 7A at 25°C, with a maximum power dissipation of 40W (Tc). The TSM7N65ACI-C0G utilizes Metal Oxide technology and offers a low on-resistance (Rds On) of 1.45Ohm maximum at 3A, 10V. It is packaged in an isolated ITO-220AB through-hole package, suitable for mounting in various power systems. Key parameters include a gate charge (Qg) of 27.8 nC at 10V and input capacitance (Ciss) of 1406 pF at 25V. This MOSFET is utilized in industries such as industrial power supplies, renewable energy systems, and automotive electronics. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.45Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 27.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1406 pF @ 25 V |
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