TSM70N10CP ROG
MOSFET N-CHANNEL 100V 70A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM70N10CP-ROG is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 70A at 25°C (Tc). The Rds(On) is specified at a maximum of 13mOhm at 30A and 10V gate drive, with a typical Gate Charge (Qg) of 145 nC at 10V. The device offers a maximum power dissipation of 120W (Tc) and is housed in a TO-252 (DPAK) surface-mount package, suitable for efficient thermal management. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is commonly utilized in power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 30 V |
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