TSM6NB60CZ C0G
MOSFET N-CHANNEL 600V 6A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM6NB60CZ-C0G is a 600V N-Channel Power MOSFET. This device features a continuous drain current (Id) of 6A at 25°C (Tc) and a maximum power dissipation of 40W (Tc). The Rds On is specified at 1.6 Ohm maximum with a 3A drain current and 10V gate-source voltage. Key parameters include a Drain to Source Voltage (Vdss) of 600V, a gate charge (Qg) of 18.3 nC maximum at 10V, and an input capacitance (Ciss) of 872 pF maximum at 25V. The TSM6NB60CZ-C0G utilizes Metal Oxide MOSFET technology and is housed in a TO-220-3 package for through-hole mounting. This component is suitable for applications in power supply, industrial, and consumer electronics sectors. Operating temperature ranges from -55°C to 150°C (TJ) with a maximum Vgs of ±30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 872 pF @ 25 V |
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