TSM6N60CP ROG
MOSFET N-CHANNEL 600V 6A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM6N60CP-ROG is a 600V N-Channel MOSFET housed in a TO-252 (DPAK) surface mount package. This device offers a continuous drain current (Id) of 6A at 25°C (Tc) and a maximum power dissipation of 89W (Tc). Key electrical characteristics include a drain-source breakdown voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 1.25 Ohms at 3A and 10V gate drive, and a gate charge (Qg) of 20.7 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 1248 pF at 25V. The operating junction temperature range is up to 150°C. This MOSFET is suitable for applications requiring high voltage switching, commonly found in power supply units, lighting, and industrial motor control. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1248 pF @ 25 V |
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