TSM6N60CH C5G
MOSFET N-CHANNEL 600V 6A TO251Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM6N60CH-C5G is a 600V N-Channel MOSFET in a TO-251 (IPAK) package. This device offers a continuous drain current of 6A at 25°C (Tc) and a maximum power dissipation of 89W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 1.25 Ohm at 3A and 10V gate drive, and a gate charge (Qg) of 20.7 nC at 10V. The input capacitance (Ciss) is a maximum of 1248 pF at 25V. This MOSFET is suitable for applications requiring high voltage switching and is often utilized in power supply units, lighting, and motor control systems. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1248 pF @ 25 V |
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