TSM6N50CP ROG
MOSFET N-CH 500V 5.6A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM6N50CP-ROG is a 500V N-Channel MOSFET designed for surface-mount applications. This component features a continuous drain current capability of 5.6A at 25°C and a maximum power dissipation of 90W at the case temperature. The Rds On characteristic is rated at a maximum of 1.4 Ohm at 2.8A and 10V gate-source voltage. Key parameters include a gate charge of 25 nC at 10V and an input capacitance of 900 pF at 25V. The device operates within a temperature range of 150°C (TJ) and is housed in a TO-252 (DPAK) package. This MOSFET is suitable for power switching applications across various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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