TSM6N50CH C5G
MOSFET N-CH 500V 5.6A TO251Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM6N50CH-C5G is an N-Channel Power MOSFET designed for applications requiring high voltage and moderate current handling. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 5.6A at 25°C. The device exhibits a maximum Rds(on) of 1.4 Ohms at 2.8A and 10V gate drive. With a maximum junction temperature of 150°C and a power dissipation of 90W (Tc), it is suitable for demanding power conversion and switching tasks. Key electrical characteristics include input capacitance (Ciss) of 900 pF at 25V and gate charge (Qg) of 25 nC at 10V. The TSM6N50CH-C5G is packaged in a TO-251 (IPAK) through-hole configuration, commonly utilized in industrial power supplies, lighting, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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