TSM680P06CZ C0G
MOSFET P-CH 60V 18A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM680P06CZ-C0G is a P-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and supports a continuous drain current of 18A at 25°C (Tc), with a maximum power dissipation of 42W (Tc). The TSM680P06CZ-C0G exhibits a low on-resistance of 68mOhm at 6A and 10V Vgs, facilitated by a gate charge of 16.4 nC (max). Its input capacitance (Ciss) is rated at 870 pF (max) at 30V Vds. Offered in a standard TO-220-3 through-hole package, this MOSFET operates across an extended temperature range of -55°C to 150°C (TJ). Applications include power switching, motor control, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 30 V |
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