TSM680P06CI C0G
MOSFET P-CH 60V 18A ITO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM680P06CI-C0G is a P-Channel MOSFET designed for robust power management applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 18A at 25°C, with a maximum power dissipation of 17W (Tc). The low on-resistance of 68mOhm is achieved at 6A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 16.4 nC (max) at 10V and an input capacitance (Ciss) of 870 pF (max) at 30V. It operates across a wide temperature range of -55°C to 150°C (TJ) and is housed in an isolated TO-220 package, suitable for through-hole mounting. This device finds application in power supplies, motor control, and battery management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 17W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | ITO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 30 V |
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