TSM60NE285CIT C0G
MOSFETManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation N-Channel MOSFET, part number TSM60NE285CIT-C0G. This through-hole device features a 600 V drain-source breakdown voltage and a continuous drain current rating of 9.5 A at 25°C (Tc). With a maximum power dissipation of 56 W (Tc) and a low Rds On of 274 mOhm at 3.2 A and 12 V Vgs, this MOSFET is suitable for demanding applications. Key parameters include an input capacitance (Ciss) of 894 pF at 300 V and a gate charge (Qg) of 22 nC at 10 V. The operating temperature range is -55°C to 150°C (TJ). The supplier device package is ITO-220TL. This component is utilized in power supply and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 274mOhm @ 3.2A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 1.4mA |
| Supplier Device Package | ITO-220TL |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 894 pF @ 300 V |
| Qualification | - |
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