TSM60NE285CH C5G
MOSFETManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM60NE285CH-C5G is a 600 V N-Channel Power MOSFET designed for high-voltage applications. This component offers a continuous drain current of 15A (Tc) and a maximum power dissipation of 139W (Tc). Key electrical characteristics include a low on-resistance of 274mOhm at 5A and 12V, and a gate charge of 22 nC at 10V. The input capacitance (Ciss) is specified at 884 pF at 300V. The TSM60NE285CH-C5G is housed in a TO-251 (IPAK) through-hole package, suitable for robust mounting. This MOSFET is utilized in power supply circuits, industrial motor control, and lighting applications. It operates across a wide temperature range from -55°C to 150°C (TJ) and supports gate-source voltages up to ±30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 274mOhm @ 5A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 1.4mA |
| Supplier Device Package | TO-251 (IPAK) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 884 pF @ 300 V |
| Qualification | - |
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