TSM60NE180CIT C0G
600V, 13A, SINGLE N-CHANNEL HIGHManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM60NE180CIT-C0G is a 600V N-channel MOSFET designed for high-voltage applications. This through-hole component, housed in an ITO-220TL package, offers a continuous drain current of 13A (Tc) and a maximum power dissipation of 63W (Tc). Key electrical characteristics include a Vgs(th) of 6V @ 1.8mA and a maximum Rds On of 165mOhm at 4.3A and 12V. Input capacitance (Ciss) is specified at 1417 pF @ 300V, with a gate charge (Qg) of 34 nC @ 10V. The operating temperature range is -55°C to 150°C (TJ). This device is suitable for use in power supply, industrial, and automotive sectors requiring robust switching performance at high voltages.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 4.3A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 1.8mA |
| Supplier Device Package | ITO-220TL |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1417 pF @ 300 V |
| Qualification | - |
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