TSM60NE145CIT C0G
MOSFETManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation N-Channel Power MOSFET, TSM60NE145CIT-C0G, offers a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 14.5A at 25°C (Tc). This through-hole component, packaged in an ITO-220TL, features a maximum Rds On of 135mOhm at 4.8A and 12V, with specified drive voltages of 10V and 12V. The input capacitance (Ciss) is 1661 pF at 300V, and the gate charge (Qg) is 40 nC at 10V. With a maximum power dissipation of 69W (Tc) and an operating temperature range of -55°C to 150°C, it is suitable for applications in power supplies, industrial motor control, and lighting. The device supports a ±30V gate-source voltage limit and a 6V threshold voltage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 4.8A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 2mA |
| Supplier Device Package | ITO-220TL |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1661 pF @ 300 V |
| Qualification | - |
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