TSM60NE110CIT C0G
600V, 17A, SINGLE N-CHANNEL HIGHManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM60NE110CIT-C0G is a 600V N-Channel power MOSFET. This device offers a continuous drain current of 17A at 25°C and a maximum power dissipation of 73W. Key electrical characteristics include a drain-to-source breakdown voltage (Vdss) of 600V, a typical on-resistance (Rds On) of 100mOhm at 5.6A and 12V, and a gate charge (Qg) of 55nC at 10V. It features an input capacitance (Ciss) of 2330pF at 300V. The TSM60NE110CIT-C0G is housed in an ITO-220TL package with through-hole mounting. This component is suitable for applications in power supplies, motor control, and industrial automation. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 5.6A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 73W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 2.5mA |
| Supplier Device Package | ITO-220TL |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2330 pF @ 300 V |
| Qualification | - |
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