TSM60NE084PW C0G
600V, 42A, SINGLE N-CHANNEL HIGHManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM60NE084PW-C0G is a high-performance N-channel Power MOSFET designed for demanding applications. This device offers a 600V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 42A at 25°C (Tc). With a maximum power dissipation of 357W (Tc), it is suitable for high-power switching applications. The TSM60NE084PW-C0G features a low on-resistance of 80mOhm at 14A and 12V (Vgs), and a gate charge of 68nC at 10V (Vgs). It is housed in a TO-247-3 package with through-hole mounting. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 14A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 2.9mA |
| Supplier Device Package | TO-247 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2939 pF @ 300 V |
| Qualification | - |
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