TSM60NE084CIT C0G
600V, 21A, SINGLE N-CHANNEL HIGHManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM60NE084CIT-C0G is a 600V N-Channel MOSFET designed for high-power applications. This through-hole component features a continuous drain current of 21A at 25°C and a maximum power dissipation of 83W at the same temperature. Key electrical parameters include a drain-to-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 82mOhm at 7A and 12V gate drive, and a gate charge (Qg) of 69 nC maximum at 10V. The device operates within a temperature range of -55°C to 150°C and is packaged in an ITO-220TL (TO-220-3 Full Pack) for efficient thermal management. This MOSFET is suitable for use in power supply units, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 7A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 2.9mA |
| Supplier Device Package | ITO-220TL |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2930 pF @ 300 V |
| Qualification | - |
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