TSM60NE069CIT C0G
600V, 24A, SINGLE N-CHANNEL HIGHManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation N-Channel MOSFET, TSM60NE069CIT-C0G, offers a 600V drain-source voltage and 24A continuous drain current at 25°C (Tc). This component features a low on-resistance of 60mOhm at 8A and 12V Vgs, with a maximum gate charge of 89 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 3551 pF at 300V. Designed for through-hole mounting, it is packaged in an ITO-220TL case. Operating across a wide temperature range from -55°C to 150°C (TJ), this MOSFET is suitable for applications in power supplies, industrial motor control, and lighting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 8A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 3.5mA |
| Supplier Device Package | ITO-220TL |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3551 pF @ 300 V |
| Qualification | - |
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