TSM60NE048PW C0G
MOSFETManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Taiwan Semiconductor Corporation TSM60NE048PW-C0G is an N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) capability of 61A at 25°C (Tc). With a maximum power dissipation of 431W (Tc), it is suitable for demanding power conversion topologies. The Rds(on) is specified at a maximum of 44mOhm at 20A and 12V gate drive. Key parameters include a gate charge (Qg) of 114 nC at 10V and an input capacitance (Ciss) of 5023 pF at 300V. The TO-247-3 package provides robust thermal performance. This device finds application in areas such as power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 431W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 4.6mA |
| Supplier Device Package | TO-247 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5023 pF @ 300 V |
| Qualification | - |
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