TSM60NC980CH C5G
600V, 4A, SINGLE N-CHANNEL POWERManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM60NC980CH-C5G is a single N-channel power MOSFET designed for demanding applications. This component features a drain-source breakdown voltage of 600 V and a continuous drain current capability of 4 A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 980 mOhm at 1.5 A and 10 V gate drive. With a maximum power dissipation of 57 W (Tc), it offers efficient power handling. The TSM60NC980CH-C5G is housed in a TO-251 (IPAK) through-hole package, suitable for various industrial and consumer electronics. Key parameters include a gate charge (Qg) of 11 nC at 10 V and an input capacitance (Ciss) of 330 pF at 300 V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 980mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 300 V |
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