TSM60NC620CI C0G
600V, 7A, SINGLE N-CHANNEL POWERManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation presents the TSM60NC620CI-C0G, a single N-channel MOSFET. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 620mOhm at 2.4A and 10V gate-source voltage. With a power dissipation (Pd) of 46W (Tc), it is suitable for applications requiring robust power handling. Key parameters include a gate charge (Qg) of 15nC (max) at 10V and input capacitance (Ciss) of 506pF (max) at 300V. The TSM60NC620CI-C0G utilizes MOSFET technology and is housed in a TO-220-3 Full Pack (ITO-220) package, facilitating through-hole mounting. Operating temperatures range from -55°C to 150°C (TJ). This component is commonly utilized in power supply, industrial control, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 620mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | ITO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 506 pF @ 300 V |
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