TSM60NC620CH C5G
600V, 7A, SINGLE N-CHANNEL POWERManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM60NC620CH-C5G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 7A at 25°C (Tc). With a maximum power dissipation of 78W (Tc), it is suitable for demanding power management tasks. The on-resistance (Rds On) is specified at 620mOhm at an Id of 2.4A and Vgs of 10V. Key parameters include a gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 501 pF at 300V. It operates across a temperature range of -55°C to 150°C (TJ). The device is housed in a TO-251 (IPAK) package with through-hole mounting. This MOSFET is utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 620mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 501 pF @ 300 V |
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