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TSM60NC196CM2 RNG

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TSM60NC196CM2 RNG

600V, 28A, SINGLE N-CHANNEL POWE

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 600 V 28A (Tc) 152W (Tc) Surface Mount TO-263AB (D2PAK)

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 4 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Rds On (Max) @ Id, Vgs196mOhm @ 9.5A, 10V
FET Feature-
Power Dissipation (Max)152W (Tc)
Vgs(th) (Max) @ Id5V @ 1mA
Supplier Device PackageTO-263AB (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1566 pF @ 300 V

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