TSM60NB380CF C0G
MOSFET N-CH 600V 11A ITO220SManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM60NB380CF-C0G is an N-Channel MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 11A at 25°C, with a maximum power dissipation of 62.5W (Tc). The on-resistance (Rds On) is specified at a maximum of 380mOhm at 2.7A, 10V. The device utilizes a TO-220S package, facilitating through-hole mounting. Key parameters include a gate charge (Qg) of 21 nC at 10V and input capacitance (Ciss) of 810 pF at 100V. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for power supply, motor control, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220S |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 100 V |
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