TSM60NB1R4CP ROG
MOSFET N-CHANNEL 600V 3A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM60NB1R4CP-ROG is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 3A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.4 Ohms at 900mA and 10V gate drive, it offers efficient power conversion. The device boasts a low gate charge (Qg) of 7.12 nC at 10V and an input capacitance (Ciss) of 257.3 pF at 100V. Packaged in a TO-252 (DPAK) surface-mount configuration, it dissipates up to 28.4W (Tc). Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for use in power supply units, lighting, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28.4W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 257.3 pF @ 100 V |
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