TSM60NB190CM2 RNG
MOSFET N-CH 600V 18A TO263Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM60NB190CM2-RNG is an N-Channel Power MOSFET designed for demanding applications. This component features a 600V drain-source breakdown voltage and a continuous drain current capability of 18A at 25°C (Tc). The low on-resistance of 190mOhm at 6A and 10V gate drive voltage, coupled with a maximum power dissipation of 150.6W (Tc), makes it suitable for high-efficiency power conversion. The device is housed in a surface mount TO-263-3, D2PAK package, facilitating integration into compact PCB designs. Key parameters include a gate charge (Qg) of 31 nC at 10V and input capacitance (Ciss) of 1273 pF at 100V. This MOSFET is utilized across industries including industrial power supplies, consumer electronics, and automotive systems. It operates within a temperature range of -55°C to 150°C (TJ) and is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150.6W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1273 pF @ 100 V |
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