TSM60NB190CI C0G
MOSFET N-CH 600V 18A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM60NB190CI-C0G is an N-Channel Power MOSFET. This device features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 18A at 25°C (Tc). The Rds On is specified at a maximum of 190mOhm at 6A and 10V gate-source voltage. With a gate charge (Qg) of 31 nC at 10V, this MOSFET offers efficient switching characteristics. Input capacitance (Ciss) is 1273 pF at 100V. The component is housed in an isolated ITO-220AB package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). Maximum power dissipation is 33.8W at 25°C (Tc). This MOSFET is commonly utilized in power supply designs and industrial applications requiring high voltage capability.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1273 pF @ 100 V |
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