TSM60NB190CF
600V, 18A, SINGLE N-CHANNEL POWEManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 600 V 18A (Tc) 59.5W (Tc) Through Hole ITO-220S
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 59.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220S |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1311 pF @ 100 V |
Request a Quote
Clients Also Buy
TSM7N90CI C0G
MOSFET N-CH 900V 7A ITO220AB
TQM056NH04LCR RLG
40V, 54A, SINGLE N-CHANNEL POWER
TSM045NA03CR RLG
MOSFET N-CH 30V 108A 8PDFN
