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TSM60NB099PW C1G

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TSM60NB099PW C1G

MOSFET N-CHANNEL 600V 38A TO247

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 600 V 38A (Tc) 329W (Tc) Through Hole TO-247

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Rds On (Max) @ Id, Vgs99mOhm @ 11.7A, 10V
FET Feature-
Power Dissipation (Max)329W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2587 pF @ 100 V

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