TSM60NB099CZ C0G
MOSFET N-CHANNEL 600V 38A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM60NB099CZ-C0G is an N-Channel Power MOSFET designed for high voltage applications. Featuring a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 38A at 25°C, this component offers a maximum on-resistance (Rds On) of 99mOhm at 11.3A and 10V gate drive. The TSM60NB099CZ-C0G is packaged in a standard TO-220-3 through-hole configuration, facilitating ease of integration into existing designs. With a maximum power dissipation of 298W at case temperature and a gate charge of 62 nC, it is suitable for demanding power conversion and switching applications across various industries including industrial power supplies and motor control. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 11.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 298W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2587 pF @ 100 V |
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