TSM60NB041PW C1G
MOSFET N-CHANNEL 600V 78A TO247Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM60NB041PW-C1G is a 600V N-Channel Power MOSFET designed for high-power applications. This component features a maximum continuous drain current of 78A at 25°C (Tc) and a continuous drain-source voltage (Vdss) of 600V. With a low on-resistance (Rds On) of 41mOhm at 21.7A and 10V, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 446W (Tc) and a gate charge (Qg) of 139 nC at 10V. Its input capacitance (Ciss) is 6120 pF at 100V. The TSM60NB041PW-C1G is housed in a TO-247-3 package, suitable for through-hole mounting. This device is typically utilized in power factor correction, switch mode power supplies, and industrial motor control systems. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 21.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 446W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6120 pF @ 100 V |
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