TSM60N900CI C0G
MOSFET N-CH 600V 4.5A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM60N900CI-C0G is a 600V N-Channel power MOSFET designed for demanding applications. This component features a continuous drain current of 4.5A at 25°C (Tc) and a maximum power dissipation of 50W (Tc). The on-resistance (Rds On) is specified as 900mOhm maximum at 2.3A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 9.7 nC at 10V and an input capacitance (Ciss) of 480 pF at 100V. The device operates across a wide temperature range from -55°C to 150°C (TJ). Packaged in an isolated ITO-220AB (TO-220-3 Full Pack, Isolated Tab) for through-hole mounting, this MOSFET is suitable for power supply, industrial automation, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 100 V |
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