TSM60N900CH C5G
MOSFET N-CH 600V 4.5A TO251Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM60N900CH-C5G is a 600V N-Channel power MOSFET designed for efficient power switching applications. This component offers a continuous drain current of 4.5A (Tc) and a maximum power dissipation of 50W (Tc). Key electrical characteristics include a low on-resistance of 900mOhm at 2.3A and 10V Vgs, with a gate charge of 9.7 nC at 10V. Input capacitance (Ciss) is rated at 480 pF at 100V. The TSM60N900CH-C5G is packaged in a TO-251-3 (IPAK) through-hole configuration, making it suitable for various power supply designs, lighting control, and motor drive applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 100 V |
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