TSM60N750CP ROG
MOSFET N-CHANNEL 600V 6A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM60N750CP-ROG is a 600V N-Channel Power MOSFET designed for efficient power switching applications. This device features a low Rds(on) of 750mOhm at 3A and 10V Vgs, with continuous drain current capability of 6A at 25°C (Tc) and a maximum power dissipation of 62.5W (Tc). The TSM60N750CP-ROG utilizes a surface mount TO-252 (DPAK) package, suitable for automated assembly. Key parameters include a gate charge of 10.8 nC at 10V Vgs and input capacitance of 554 pF at 100V Vds. Operating temperature range is -55°C to 150°C. This component is commonly employed in switch-mode power supplies, lighting, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 554 pF @ 100 V |
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