TSM60N600CP ROG
MOSFET N-CHANNEL 600V 8A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM60N600CP-ROG is a 600V N-Channel MOSFET designed for surface mount applications. This component features a continuous drain current (Id) of 8A at 25°C and a maximum power dissipation of 83W (Tc). The Rds On is specified at 600mOhm maximum at 4A, 10V. Key parameters include a Vds of 600V, a gate charge (Qg) of 13 nC maximum at 10V, and input capacitance (Ciss) of 743 pF maximum at 100V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-252-3, DPAK package. This MOSFET is suitable for use in power supply, lighting, and consumer electronics applications. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 743 pF @ 100 V |
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