TSM60N600CI C0G
MOSFET N-CH 600V 8A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM60N600CI-C0G is a 600V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current (Id) of 8A at 25°C and a maximum power dissipation of 83W at the same temperature. The Rds(On) is specified at 600mOhm maximum for 4A at 10V gate drive. Key parameters include a gate charge (Qg) of 13 nC and input capacitance (Ciss) of 743 pF at 100V. The device utilizes a TO-220AB package with through-hole mounting and an isolated tab, suitable for thermal management in power supply, lighting, and industrial control systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 743 pF @ 100 V |
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