TSM60N600CH C5G
MOSFET N-CHANNEL 600V 8A TO251Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM60N600CH-C5G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 8A at 25°C. The Rds(On) is specified at a maximum of 600mOhm with an Id of 4A and Vgs of 10V. Power dissipation is rated at 83W (Tc). Key parameters include a Gate Charge (Qg) of 13 nC (Max) at 10V and Input Capacitance (Ciss) of 743 pF (Max) at 100V. The device is housed in a TO-251 (IPAK) package with short leads, suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in power supply units, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 743 pF @ 100 V |
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