TSM60N380CI C0G
MOSFET N-CH 600V 11A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM60N380CI-C0G is a 600V N-Channel Power MOSFET designed for demanding applications. This device features a continuous drain current of 11A at 25°C (Tc) and a maximum power dissipation of 125W (Tc). With a low on-resistance of 380mOhm at 5.5A and 10V, it offers efficient switching performance. Key parameters include a gate charge of 20.5 nC at 10V and input capacitance (Ciss) of 1040 pF at 100V. The TSM60N380CI-C0G is housed in an isolated ITO-220AB package, suitable for through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 100 V |
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