TSM60N1R4CP ROG
MOSFET N-CH 600V 3.3A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM60N1R4CP-ROG is a 600V N-Channel Power MOSFET designed for demanding applications. This surface-mount device, housed in a TO-252 (DPAK) package, offers a continuous drain current of 3.3A (Tc) and a maximum power dissipation of 38W (Tc). Its key electrical characteristics include a maximum on-resistance of 1.4 Ohms at 2A and 10V gate drive, with a gate charge of 7.7 nC at 10V. The input capacitance (Ciss) is rated at 370 pF at 100V. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in power supply units, industrial automation, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 100 V |
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