TSM60N1R4CH C5G
MOSFET N-CH 600V 3.3A TO251Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM60N1R4CH-C5G is a 600V N-Channel MOSFET designed for high-voltage applications. This component features a continuous drain current of 3.3A (Tc) and a maximum power dissipation of 38W (Tc). The Rds On is specified at a maximum of 1.4 Ohm at 2A and 10V gate drive. Key parameters include a gate charge of 7.7 nC @ 10V and input capacitance of 370 pF @ 100V. The device operates within a temperature range of -55°C to 150°C (TJ). The TSM60N1R4CH-C5G is housed in a TO-251 (IPAK) package with through-hole mounting. This MOSFET is suitable for use in power supply units and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 100 V |