TSM5NC50CZ C0G
MOSFET N-CHANNEL 500V 5A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Taiwan Semiconductor Corporation TSM5NC50CZ-C0G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 5A at 25°C, with a maximum power dissipation of 89W (Tc). The Rds On is specified as 1.38 Ohms maximum at 2.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 586 pF at 50V. The TSM5NC50CZ-C0G utilizes TO-220 through-hole packaging and operates across a temperature range of -55°C to 150°C. This device is suitable for power supply units, motor control, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.38Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 586 pF @ 50 V |
Request a Quote
Clients Also Buy
TSM7N90CI C0G
MOSFET N-CH 900V 7A ITO220AB
TSM2311CX RFG
MOSFET P-CHANNEL 20V 4A SOT23
TSM60N900CP ROG
MOSFET N-CH 600V 4.5A TO252
