TSM500N03CP ROG
MOSFET N-CH 30V 12.5A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM500N03CP-ROG is an N-channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 12.5A at 25°C, with a maximum power dissipation of 12.5W. The Rds On is specified at a maximum of 50mOhm when driven at 8A with a 10V gate-source voltage, and the device is optimized for a 4.5V to 10V gate drive range. With a gate charge (Qg) of 7 nC at 4.5V and input capacitance (Ciss) of 270 pF at 25V, it offers excellent switching characteristics. The TSM500N03CP-ROG is housed in a surface-mount TO-252 (DPAK) package, suitable for automated assembly processes. Its operating temperature range extends up to 150°C (TJ). This MOSFET is commonly utilized in automotive, industrial power control, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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