TSM4ND60CI C0G
MOSFET N-CH 600V 4A ITO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM4ND60CI-C0G is a 600V N-Channel MOSFET in an isolated ITO-220 package. This device features a continuous drain current of 4A at 25°C and a maximum power dissipation of 41.6W at the same temperature. With a drain-to-source voltage (Vdss) of 600V, it offers a low on-resistance of 2.2 Ohms maximum at 1.4A and 10V gate drive. Key parameters include a gate charge of 17.2 nC and input capacitance of 582 pF. The operating temperature range is -55°C to 150°C. This component is suitable for applications in industrial power supplies and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41.6W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | ITO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 582 pF @ 50 V |
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