TSM4NC60CI C0G
MOSFET N-CH 600V 4A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM4NC60CI-C0G MOSFET. This N-Channel power MOSFET features a 600V drain-source voltage and a continuous drain current of 4A at 25°C. With a maximum power dissipation of 40W (Tc) and a low on-resistance of 2.5 Ohms at 1.3A and 10V Vgs, this component is suitable for high-voltage switching applications. The TSM4NC60CI-C0G utilizes Metal Oxide technology and is housed in an isolated ITO-220AB package, facilitating through-hole mounting. Key parameters include a gate charge of 18 nC at 10V and input capacitance of 654 pF at 50V. This device operates across a wide temperature range from -55°C to 150°C. It finds application in power supply units and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 654 pF @ 50 V |
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