TSM4NC50CP ROG
MOSFET N-CHANNEL 500V 4A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM4NC50CP-ROG is a N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 4A at 25°C (Tc), with a maximum power dissipation of 83W (Tc). The TSM4NC50CP-ROG offers a low on-resistance (Rds On) of 2.7 Ohms maximum at 1.7A and 10V Vgs. Its surface mount TO-252 (DPAK) package is suitable for automated assembly processes. Key electrical characteristics include a gate charge (Qg) of 12 nC maximum at 10V Vgs and input capacitance (Ciss) of 453 pF maximum at 50V Vds. This MOSFET is engineered for operation across a wide temperature range of -55°C to 150°C (TJ). Applications for this device include power supply units, lighting, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 453 pF @ 50 V |