TSM4NB65CP ROG
MOSFET N-CHANNEL 650V 4A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM4NB65CP-ROG is a 650V N-Channel Power MOSFET with a continuous drain current of 4A at 25°C (Tc) and a maximum power dissipation of 70W (Tc). This TO-252 (DPAK) packaged component features a low on-resistance of 3.37 Ohms at 2A and 10V Vgs, with a gate charge of 13.46 nC at 10V. The input capacitance (Ciss) is a maximum of 549 pF at 25V. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage of ±30V. This device is suitable for applications in power supply units, lighting, and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.37Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 549 pF @ 25 V |
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