TSM4NB60CZ C0G
MOSFET N-CHANNEL 600V 4A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM4NB60CZ-C0G is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current capability of 4A at 25°C (Tc) and a maximum power dissipation of 50W (Tc). The on-resistance (Rds On) is specified at 2.5 Ohms maximum at 2A and 10V Vgs. Key parameters include a gate charge (Qg) of 14.5 nC maximum at 10V Vgs and an input capacitance (Ciss) of 500 pF maximum at 25V Vds. The TSM4NB60CZ-C0G is housed in a TO-220-3 package, suitable for through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This device is utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
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